| PART |
Description |
Maker |
| MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器，300 mA的LDO具有电源就绪输出
|
Yageo, Corp.
Microchip Technology, Inc.
Microchip Technology Inc.
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| LV100-300 |
Voltage Transducer LV 100-300 电压互感器低00-300
|
LEM[LEM]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| PEEL18LV8Z-25 PEEL18LV8ZJ-25 PEEL18LV8ZJ-25L PEEL1 |
EE PLD, 35 ns, PDSO20 0.170 INCH, TSSOP-20
EE PLD, 35 ns, PDIP20 0.300 INCH, PLASTIC, DIP-20
EE PLD, 35 ns, PDSO20 0.300 INCH, LEAD FREE, SOIC-20
EE PLD, 35 ns, PDIP20 0.300 INCH, LEAD FREE, PLASTIC, DIP-20
EE PLD, 35 ns, PDSO20 0.170 INCH, LEAD FREE, TSSOP-20
EE PLD, 35 ns, PDSO20 0.300 INCH, SOIC-20
EE PLD, 25 ns, PQCC20 LEAD FREE, PLASTIC, LCC-20
EE PLD, 25 ns, PQCC20 PLASTIC, LCC-20
CMOS Programmable Electrically Erasable Logic Device
10 inputs 8 I/Os 8 registers 12 macro cells configurable 20 pins 2.7-3.6V zero power SPLD
|
Integrated Circuit Technology Corp
ANACHIP[Anachip Corp]
|
| NE3004VA10A A5800563 NE3004-VA10A |
Near edge thermal printhead (300 dots / inch)
From old datasheet system
Near edge thermal printhead (300 dots/inch)
Thermal Printheads > Fro Plastic Card > NE200*-, 300*-VA@ Series
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| SDR626CT/3 SDR623CT/3 SDR623CT-3 |
40A 35nsec 300-600 V Hyper Fast Centertap Rectifier 40A35nsec 300-600 V超快速整流器Centertap
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
|
